elektronische bauelemente SSD30N10-78D 21a, 100v, r ds(on) 78m n-ch enhancement mode power mosfet 27-may-2013 rev. a page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. to - 252(d - pack) a c d n o p g e f h k j m b rohs compliant product a suffix of -c specifies halogen free description these miniature surface mount mosfets utilize a high cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. features low r ds(on) provides higher efficiency and extends battery life low thermal impedance copper leadframe to-252 saves board space fast switching speed high performance trench technology application dc-dc converters and power management in portable and battery-powered products such as computers, pri nters, pcmcia cards, cellular and cordless telephones. package information package mpq leader size to-252 2.5k 13 inch absolute maximum ratings (t a = 25 c unless otherwise specified) parameter symbol ratings unit drain-source voltage v ds 100 v gate-source voltage v gs 20 v continuous drain current 1 t c =25c i d 21 a pulsed drain current 2 i dm 36 a continuous source current (diode conduction) 1 i s 30 a power dissipation 1 t c =25c p d 50 w operating junction and storage temperature range t j , t stg -55 ~ 175 c thermal resistance ratings maximum thermal resistance junction-ambient 1 r ja 50 c / w maximum thermal resistance junction-case r jc 3.0 c / w notes: 1. surface mounted on 1 x 1 fr4 board. 2. pulse width limited by maximum junction tempera ture. millimeter millimeter ref. min. max. ref. min. max. a 6. 4 6.8 j 2.30 ref. b 5.20 5.50 k 0.70 0 .90 c 2.20 2.40 m 0.50 1.1 d 0.45 0.58 n 0.9 1.6 e 6.8 7.3 o 0 0.15 f 2.40 3.0 p 0.43 0.58 g 5.40 6.2 h 0.8 1.20 1 gate 3 source 2 drain
elektronische bauelemente SSD30N10-78D 21a, 100v, r ds(on) 78m n-ch enhancement mode power mosfet 27-may-2013 rev. a page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t a = 25 c unless otherwise specified) parameter symbol min. typ. max. unit test conditions static gate-source threshold voltage v gs(th) 1.0 - - v v ds =v gs , i d =250 a gate-body leakage i gss - - 100 na v ds =0, v gs =20v - - 1 v ds =80v, v gs =0 zero gate voltage drain current i dss - - 25 a v ds =80v, v gs =0,t j =55c on-state drain current 1 i d(on) 34 - - a v ds =5v, v gs =10v - - 78 v gs =10v, i d =1a drain-source on-resistance 1 r ds(on) - - 98 m v gs =4.5v, i d =1a forward transconductance 1 g fs - 4.4 - s v ds =40v, i d =1a diode forward voltage v sd - 1.1 - v i s =1a, v gs =0 dynamic 2 total gate charge q g - 9 - gate-source charge q gs - 3 - gate-drain change q gd - 3 - nc i d =1a v ds =25v v gs =10v turn-on delay time t d(on) - 4 - rise time t r - 2 - turn-off delay time t d(off) - 20 - fall time t f - 5 - ns v dd =100v i d =1a r l =25 v gen =10v notes: 1. pulse test pw Q 300 us duty cycle Q 2 . 2. guaranteed by design, not subject to production testing.
|
